丝印F0RQE TO-236-3，SC-59，SOT-23-3 Micro3™/SOT-23 Datasheet规格书 单通道MOS管
图片仅为示意图。应从产品数据表中获得确切规格
记录
2018-10-06 15:45:44
| 丝印F0RQE |
|
| markingcode：F0RQE |
类别：单通道MOS管 |
| 外壳:TO-236-3，SC-59，SOT-23-3 |
外壳:Micro3™/SOT-23 |
| 引脚数:3 |
Datasheet规格书 |
| G(Gate)引脚: |
包装: |
| D(Drain)引脚: |
等级:- |
| S(Source): |
权限:VIP开放
|
| 反查型号:
VIP开放
|
|
SELECT COLUMN_NAME as bt,COLUMN_COMMENT as bz,SUBSTRING(COLUMN_COMMENT,2,1) as zss_px FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_fet_mosfet_d' AND table_schema='golon' and COLUMN_COMMENT like '*%' and COLUMN_COMMENT REGEXP '[0-9]' ORDER by zss_px limit 6array(6) {
[0]=>
array(3) {
["bt"]=>
string(5) "fetlx"
["bz"]=>
string(13) "*1Fet类型*1"
["zss_px"]=>
string(1) "1"
}
[1]=>
array(3) {
["bt"]=>
string(5) "ldjdy"
["bz"]=>
string(25) "*2漏源极电压(vdss)*2"
["zss_px"]=>
string(1) "2"
}
[2]=>
array(3) {
["bt"]=>
string(7) "dl_lxlj"
["bz"]=>
string(27) "*3电流-连续漏极(id)*3"
["zss_px"]=>
string(1) "3"
}
[3]=>
array(3) {
["bt"]=>
string(7) "vgs_zdz"
["bz"]=>
string(18) "*4Vgs(最大值)*4"
["zss_px"]=>
string(1) "4"
}
[4]=>
array(3) {
["bt"]=>
string(6) "gn_zdz"
["bz"]=>
string(19) "*5功率-最大值*"
["zss_px"]=>
string(1) "5"
}
[5]=>
array(3) {
["bt"]=>
string(4) "gzwd"
["bz"]=>
string(15) "*6工作温度*"
["zss_px"]=>
string(1) "6"
}
}
| 主要参数 |
相关问题与支持 |
| Fet类型:
P 通道 |
1.F0RQE丝印反查常见问题 |
| 漏源极电压(vdss):
12V |
2. |
| 电流-连续漏极(id):
4.3A（Ta） |
3. |
| Vgs(最大值):
15nC @ 5V |
4. |
| 功率-最大值:
- |
5. |
| 工作温度:
- |
更多参考.... |
关键词:丝印F0RQE,标识F0RQE,芯片代码F0RQE,F0RQE反查型号,丝印代码F0RQE,F0RQE型号,F0RQE原厂型号
