丝印CCEBE POWERPAK® CHIPFET™ 双 POWERPAK® CHIPFET 双 Datasheet规格书 多通道MOS管
图片仅为示意图。应从产品数据表中获得确切规格
记录
2018-04-24 18:36:00
| 丝印CCEBE |
|
| markingcode：CCEBE |
类别：多通道MOS管 |
| 外壳:POWERPAK® CHIPFET™ 双 |
外壳:POWERPAK® CHIPFET 双 |
| 引脚数:8 |
Datasheet规格书 |
| G(Gate)引脚:- |
包装: |
| D(Drain)引脚:- |
等级:- |
| S(Source): |
权限:VIP开放
|
| 反查型号:
VIP开放
|
|
SELECT COLUMN_NAME as bt,COLUMN_COMMENT as bz,SUBSTRING(COLUMN_COMMENT,2,1) as zss_px FROM INFORMATION_SCHEMA.Columns WHERE table_name='golon_jtg_fet_mosfet_zl' AND table_schema='golon' and COLUMN_COMMENT like '*%' and COLUMN_COMMENT REGEXP '[0-9]' ORDER by zss_px limit 6array(6) {
[0]=>
array(3) {
["bt"]=>
string(5) "fetlx"
["bz"]=>
string(13) "*1Fet类型*1"
["zss_px"]=>
string(1) "1"
}
[1]=>
array(3) {
["bt"]=>
string(5) "ldjdy"
["bz"]=>
string(25) "*2漏源极电压(vdss)*2"
["zss_px"]=>
string(1) "2"
}
[2]=>
array(3) {
["bt"]=>
string(7) "dl_lxlj"
["bz"]=>
string(27) "*3电流-连续漏极(id)*3"
["zss_px"]=>
string(1) "3"
}
[3]=>
array(3) {
["bt"]=>
string(6) "gn_zdz"
["bz"]=>
string(19) "*4最大功率值*4"
["zss_px"]=>
string(1) "4"
}
[4]=>
array(3) {
["bt"]=>
string(5) "fetgn"
["bz"]=>
string(13) "*5Fet功能*5"
["zss_px"]=>
string(1) "5"
}
[5]=>
array(3) {
["bt"]=>
string(4) "gzwd"
["bz"]=>
string(16) "*6工作温度*6"
["zss_px"]=>
string(1) "6"
}
}
| 主要参数 |
相关问题与支持 |
| Fet类型:
2 N-通道（双） |
1.CCEBE丝印反查常见问题 |
| 漏源极电压(vdss):
40V |
2. |
| 电流-连续漏极(id):
6A |
3. |
| 最大功率值:
10W |
4. |
| Fet功能:
逻辑电平门 |
5. |
| 工作温度:
-55°C ~ 150°C（TJ） |
更多参考.... |
关键词:丝印CCEBE,标识CCEBE,芯片代码CCEBE,CCEBE反查型号,丝印代码CCEBE,CCEBE型号,CCEBE原厂型号
